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ORCIDRuonan Han 0001
Person information
- affiliation: Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA, USA
- affiliation (PhD 2014): Cornell University, Department of Electrical and Computer Engineering, Ithaca, NY, USA
- affiliation (former): University of Florida, Gainesville, FL, USA
Other persons with the same name
- Ruonan Han 0002 — Ministry of Education, Key Laboratory of Universal Wireless Communication, Beijing, China
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2020 – today
- 2024
[j26]Eunseok Lee
, Muhammad Ibrahim Wasiq Khan, Xibi Chen, Utsav Banerjee, Nathan M. Monroe, Rabia Tugce Yazicigil, Ruonan Han, Anantha P. Chandrakasan:
A 1.54-mm2, 264-GHz Wake-Up Receiver With Integrated Cryptographic Authentication for Ultra-Miniaturized Platforms. IEEE J. Solid State Circuits 59(3): 653-667 (2024)- [c26]Eunseok Lee, Xibi Chen, Maitreyi Ashok, Jae-Yeon Won, Anantha P. Chandrakasan, Ruonan Han:
12.5 A Packageless Anti-Tampering Tag Utilizing Unclonable Sub-THz Wave Scattering at the Chip-Item Interface. ISSCC 2024: 226-228 - 2023
- [c25]Eunseok Lee, Muhammad Ibrahim Wasiq Khan, Xibi Chen, Utsav Banerjee, Nathan M. Monroe, Rabia Tugce Yazicigil, Ruonan Han, Anantha P. Chandrakasan:
A 1.54mm2 Wake-Up Receiver Based on THz Carrier Wave and Integrated Cryptographic Authentication. CICC 2023: 1-2 - [c24]Jinchen Wang, Mohamed I. Ibrahim, Isaac B. Harris, Nathan M. Monroe, Muhammad Ibrahim Wasiq Khan, Xiang Yi, Dirk R. Englund, Ruonan Han:
THz Cryo-CMOS Backscatter Transceiver: A Contactless 4 Kelvin-300 Kelvin Data Interface. ISSCC 2023: 504-505 - 2022
- [j25]Xingcun Li, Wenhua Chen, Shuyang Li, Yunfan Wang, Fei Huang, Xiang Yi, Ruonan Han, Zhenghe Feng:
A High-Efficiency 142-182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique. IEEE J. Solid State Circuits 57(2): 371-384 (2022) - [j24]Muhammad Ibrahim Wasiq Khan, Jongchan Woo, Xiang Yi, Mohamed I. Ibrahim, Rabia Tugce Yazicigil, Anantha P. Chandrakasan, Ruonan Han:
A 0.31-THz Orbital-Angular-Momentum (OAM) Wave Transceiver in CMOS With Bits-to-OAM Mode Mapping. IEEE J. Solid State Circuits 57(5): 1344-1357 (2022) - [j23]Xingcun Li, Wenhua Chen, Huibo Wu, Shuyang Li, Xiang Yi, Ruonan Han, Zhenghe Feng:
A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner. IEEE J. Solid State Circuits 57(12): 3567-3581 (2022) - [j22]Xibi Chen, Xiang Yi, Muhammad Ibrahim Wasiq Khan, Xingcun Li, Wenhua Chen, Jianfeng Zhu, Yang Yang, Kenneth E. Kolodziej, Nathan M. Monroe, Ruonan Han:
A 140-GHz FMCW TX/RX-Antenna-Sharing Transceiver With Low-Inherent-Loss Duplexing and Adaptive Self-Interference Cancellation. IEEE J. Solid State Circuits 57(12): 3631-3645 (2022) - [c23]Nathan M. Monroe, Georgios C. Doqiamis, Robert Stingel, Preston Myers, Xibi Chen, Ruonan Han:
Electronic THz Pencil Beam Forming and 2D Steering for High Angular-Resolution Operation: A 98×98-Unit 265GHz CMOS Reflectarray with In-Unit Digital Beam Shaping and Squint Correction. ISSCC 2022: 1-3 - [c22]Xibi Chen, Muhammad Ibrahim Wasiq Khan, Xiang Yi, Xingcun Li, Wenhua Chen, Jianfeng Zhu, Yang Yang, Kenneth E. Kolodziej, Nathan M. Monroe, Ruonan Han:
A 140GHz Transceiver with Integrated Antenna, Inherent-Low-Loss Duplexing and Adaptive Self-Interference Cancellation for FMCW Monostatic Radar. ISSCC 2022: 80-82 - [c21]Xingcun Li, Wenhua Chen, Shuyang Li, Huibo Wu, Xiang Yi, Ruonan Han, Zhenghe Feng:
A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency. ISSCC 2022: 316-318 - [c20]Jongchan Woo, Muhammad Ibrahim Wasiq Khan, Mohamed I. Ibrahim, Ruonan Han, Anantha P. Chandrakasan, Rabia Tugce Yazicigil:
Physical-Layer Security for THz Communications via Orbital Angular Momentum Waves. SiPS 2022: 1-6 - 2021
- [j21]Xiang Yi, Cheng Wang, Xibi Chen, Jinchen Wang, Jesús Grajal, Ruonan Han:
A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture. IEEE J. Solid State Circuits 56(2): 327-339 (2021) - [j20]Muhammad Ibrahim Wasiq Khan, Mohamed I. Ibrahim, Chiraag Shashikant Juvekar, Wanyeong Jung, Rabia Tugce Yazicigil, Anantha P. Chandrakasan, Ruonan Han:
CMOS THz-ID: A 1.6-mm² Package-Less Identification Tag Using Asymmetric Cryptography and 260-GHz Far-Field Backscatter Communication. IEEE J. Solid State Circuits 56(2): 340-354 (2021) - [j19]Cheng Wang, Xiang Yi, Mina Kim, Qingyu Ben Yang, Ruonan Han:
A Terahertz Molecular Clock on CMOS Using High-Harmonic-Order Interrogation of Rotational Transition for Medium-/Long-Term Stability Enhancement. IEEE J. Solid State Circuits 56(2): 566-580 (2021) - [j18]Mohamed I. Ibrahim, Christopher Foy, Dirk R. Englund, Ruonan Han:
High-Scalability CMOS Quantum Magnetometer With Spin-State Excitation and Detection of Diamond Color Centers. IEEE J. Solid State Circuits 56(3): 1001-1014 (2021) - [j17]Xiang Yi, Jinchen Wang, Marco Colangelo, Cheng Wang, Kenneth E. Kolodziej, Ruonan Han:
Realization of In-Band Full-Duplex Operation at 300 and 4.2 K Using Bilateral Single-Sideband Frequency Conversion. IEEE J. Solid State Circuits 56(5): 1387-1397 (2021) - [j16]Zhi Hu, Mehmet Kaynak, Ruonan Han:
Erratum to "High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure". IEEE J. Solid State Circuits 56(10): 3202 (2021) - [j15]Xiang Yi, Cheng Wang, Zhi Hu, Jack W. Holloway, Muhammad Ibrahim Wasiq Khan, Mohamed I. Ibrahim, Mina Kim, Georgios C. Dogiamis, Bradford Perkins, Mehmet Kaynak, Rabia Tugce Yazicigil, Anantha P. Chandrakasan, Ruonan Han:
Emerging Terahertz Integrated Systems in Silicon. IEEE Trans. Circuits Syst. I Regul. Pap. 68(9): 3537-3550 (2021) - [c19]Jack W. Holloway, Georgios C. Dogiamis, Ruonan Han:
A 105Gb/s Dielectric-Waveguide Link in 130nm BiCMOS Using Channelized 220-to-335GHz Signal and Integrated Waveguide Coupler. ISSCC 2021: 196-198 - 2020
- [c18]Xiang Yi, Cheng Wang, Muting Lu, Jinchen Wang, Jesús Grajal, Ruonan Han:
4.8 A Terahertz FMCW Comb Radar in 65nm CMOS with 100GHz Bandwidth. ISSCC 2020: 90-92 - [c17]Cheng Wang, Xiang Yi, Mina Kim, Ruonan Han:
29.5 Sub-THz CMOS Molecular Clock with 43ppt Long-Term Stability Using High-Order Rotational Transition Probing and Slot-Array Couplers. ISSCC 2020: 448-450 - [c16]Mohamed I. Ibrahim, Muhammad Ibrahim Wasiq Khan, Wanyeong Jung, Rabia Tugce Yazicigil, Chiraag Shashikant Juvekar, Anantha P. Chandrakasan, Ruonan Han:
29.8 THzID: A 1.6mm2 Package-Less Cryptographic Identification Tag with Backscattering and Beam-Steering at 260GHz. ISSCC 2020: 454-456
2010 – 2019
- 2019
- [j14]Kenneth K. O, Wooyeol Choi, Qian Zhong, Navneet Sharma, Yaming Zhang, Ruonan Han, Zeshan Ahmad, Dae Yeon Kim, Sandeep Kshattry, Ivan R. Medvedev, David J. Lary, Hyun-Joo Nam, Philip Raskin, Insoo Kim:
Opening Terahertz for Everyday Applications. IEEE Commun. Mag. 57(8): 70-76 (2019) - [j13]Cheng Wang, Xiang Yi, James Mawdsley, Mina Kim, Zhi Hu, Yaqing Zhang, Bradford Perkins, Ruonan Han:
Chip-Scale Molecular Clock. IEEE J. Solid State Circuits 54(4): 914-926 (2019) - [j12]Zhi Hu, Cheng Wang, Ruonan Han:
A 32-Unit 240-GHz Heterodyne Receiver Array in 65-nm CMOS With Array-Wide Phase Locking. IEEE J. Solid State Circuits 54(5): 1216-1227 (2019) - [j11]Massimo Alioto, Magdy S. Abadir, Tughrul Arslan, Chirn Chye Boon, Andreas Burg, Chip-Hong Chang, Meng-Fan Chang, Yao-Wen Chang, Poki Chen, Pasquale Corsonello, Paolo Crovetti, Shiro Dosho, Rolf Drechsler, Ibrahim Abe M. Elfadel, Ruonan Han, Masanori Hashimoto, Chun-Huat Heng, Deukhyoun Heo, Tsung-Yi Ho, Houman Homayoun, Yuh-Shyan Hwang, Ajay Joshi, Rajiv V. Joshi, Tanay Karnik, Chulwoo Kim, Tony Tae-Hyoung Kim, Jaydeep Kulkarni, Volkan Kursun, Yoonmyung Lee, Hai Helen Li, Huawei Li, Prabhat Mishra, Baker Mohammad, Mehran Mozaffari Kermani, Makoto Nagata, Koji Nii, Partha Pratim Pande, Bipul C. Paul, Vasilis F. Pavlidis, José Pineda de Gyvez, Ioannis Savidis, Patrick Schaumont, Fabio Sebastiano, Anirban Sengupta, Mingoo Seok, Mircea R. Stan, Mark M. Tehranipoor, Aida Todri-Sanial, Marian Verhelst, Valerio Vignoli, Xiaoqing Wen, Jiang Xu, Wei Zhang, Zhengya Zhang, Jun Zhou, Mark Zwolinski, Stacey Weber:
Editorial TVLSI Positioning - Continuing and Accelerating an Upward Trajectory. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 253-280 (2019) - [c15]Mohamed I. Ibrahim, Christopher Foy, Dirk R. Englund, Ruonan Han:
A Scalable Quantum Magnetometer in 65nm CMOS with Vector-Field Detection Capability. ISSCC 2019: 458-461 - 2018
- [j10]Zhi Hu, Mehmet Kaynak, Ruonan Han:
High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure. IEEE J. Solid State Circuits 53(5): 1313-1327 (2018) - [j9]Cheng Wang, Bradford Perkins, Zihan Wang, Ruonan Han:
Molecular Detection for Unconcentrated Gas With ppm Sensitivity Using 220-to-320-GHz Dual-Frequency-Comb Spectrometer in CMOS. IEEE Trans. Biomed. Circuits Syst. 12(3): 709-721 (2018) - [c14]Qian Zhong, Wooyeol Choi, Dae Yeon Kim, Zeshan Ahmad, Rui Xu, Yaming Zhang, Ruonan Han, Sandeep Kshattry, Navneet Sharma, Z.-Y. Chen, Dongha Shim, Swaminathan Sankaran, Eunyoung Seok, Chuying Mao, Frank C. De Lucia, James P. McMillan, Christopher F. Neese, Insoo Kim, Ibukunoluwa Momson, Pavan Yelleswarapu, Shenggang Dong, Behnam Pouya, Pranith R. Byreddy, Z. Chen, Yukun Zhu, Suprovo Ghosh, Toan Dinh, Farzaneh Jalalibidgoli, J. Newman, Kenneth K. O:
CMOS terahertz receivers. CICC 2018: 1-8 - [c13]Cheng Wang, Xiang Yi, Mina Kim, Yaqing Zhang, Ruonan Han:
A CMOS Molecular Clock Probing 231.061-GHz Rotational Line of OCS with Sub-PPB Long-Term Stability and 66-MW DC Power. VLSI Circuits 2018: 113-114 - [c12]Mohamed I. Ibrahim, Christopher Foy, Donggyu Kim, Dirk R. Englund, Ruonan Han:
Room-Temperature Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry. VLSI Circuits 2018: 249-250 - 2017
- [j8]Cheng Wang, Ruonan Han:
Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity. IEEE J. Solid State Circuits 52(12): 3361-3372 (2017) - [c11]Cheng Wang, Ruonan Han:
17.6 Rapid and energy-efficient molecular sensing using dual mm-Wave combs in 65nm CMOS: A 220-to-320GHz spectrometer with 5.2mW radiated power and 14.6-to-19.5dB noise figure. ISSCC 2017: 302-303 - [c10]Zhi Hu, Cheng Wang, Ruonan Han:
Energy-efficient terahertz electronics using multi-functional electromagnetism and high-parallelism architecture. MWSCAS 2017: 1129-1132 - 2016
- [j7]Chen Jiang, Ali Mostajeran, Ruonan Han, Mohammad Emadi, Hani Sherry, Andreia Cathelin, Ehsan Afshari:
A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS. IEEE J. Solid State Circuits 51(11): 2596-2609 (2016) - [c9]Chen Jiang, Ali Mostajeran, Ruonan Han, Mohammad Emadi, Hani Sherry, Andreia Cathelin, Ehsan Afshari:
25.5 A 320GHz subharmonic-mixing coherent imager in 0.13µm SiGe BiCMOS. ISSCC 2016: 432-434 - 2015
- [j6]Ruonan Han, Chen Jiang, Ali Mostajeran, Mohammad Emadi, Hamidreza Aghasi, Hani Sherry, Andreia Cathelin, Ehsan Afshari:
A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop. IEEE J. Solid State Circuits 50(12): 2935-2947 (2015) - [c8]Ruonan Han, Chen Jiang, Ali Mostajeran, Mohammad Emadi, Hamidreza Aghasi, Hani Sherry, Andreia Cathelin, Ehsan Afshari:
25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems. ISSCC 2015: 1-3 - 2013
- [j5]Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Ehsan Afshari, Kenneth K. O:
Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel. IEEE J. Solid State Circuits 48(10): 2296-2308 (2013) - [j4]Ruonan Han, Ehsan Afshari:
A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy. IEEE J. Solid State Circuits 48(12): 3090-3104 (2013) - [c7]Ruonan Han, Ehsan Afshari:
A 260GHz broadband source with 1.1mW continuous-wave radiated power and EIRP of 15.7dBm in 65nm CMOS. ISSCC 2013: 138-139 - [c6]Yaming Zhang, Ruonan Han, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Swaminathan Sankaran, Chuying Mao, Eunyoung Seok, Dongha Shim, Kenneth K. O:
Schottky diodes in CMOS for terahertz circuits and systems. RWS 2013: 43-45 - 2012
- [c5]Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Kenneth K. O:
Terahertz image sensors using CMOS Schottky barrier diodes. ISOCC 2012: 254-257 - [c4]Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Ehsan Afshari, Kenneth K. O:
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS. ISSCC 2012: 254-256 - 2011
- [j3]Ruonan Han, Yaming Zhang, Dominique Coquillat, Hadley Videlier, Wojciech Knap, Elliott Brown, Kenneth K. O:
A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS. IEEE J. Solid State Circuits 46(11): 2602-2612 (2011) - 2010
- [j2]Hsin-Ta Wu, Ruonan Han, Wuttichai Lerdsitsomboon, Changhua Cao, Kenneth K. O:
Multi-Level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier With Negative Resistance Enhanced Power Gain for 400-Mbps Data Transmission. IEEE J. Solid State Circuits 45(5): 1072-1079 (2010) - [j1]Eunyoung Seok, Dongha Shim, Chuying Mao, Ruonan Han, Swaminathan Sankaran, Changhua Cao, Wojciech Knap, Kenneth K. O:
Progress and Challenges Towards Terahertz CMOS Integrated Circuits. IEEE J. Solid State Circuits 45(8): 1554-1564 (2010) - [c3]Ruonan Han, Yaming Zhang, Dominique Coquillat, Julie Hoy, Hadley Videlier, Wojciech Knap, Elliott Brown, Kenneth K. O:
280-GHz schottky diode detector in 130-nm digital CMOS. CICC 2010: 1-4
2000 – 2009
- 2009
- [c2]Dongha Shim, Chuying Mao, Ruonan Han, Swaminathan Sankaran, Eunyoung Seok, Changhua Cao, Wojciech Knap, Kenneth K. O:
Paths to terahertz CMOS integrated circuits. CICC 2009: 657-664 - [c1]Swaminathan Sankaran, Chuying Mao, Eunyoung Seok, Dongha Shim, Changhua Cao, Ruonan Han, Daniel J. Arenas, David B. Tanner, Stephen Hill, Chih-Ming Hung, Kenneth K. O:
Towards terahertz operation of CMOS. ISSCC 2009: 202-203
Coauthor Index
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