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This is just a disambiguation page, and is not intended to be the bibliography of an actual person. Any publication listed on this page has not been assigned to an actual author yet. If you know the true author of one of the publications listed below, you are welcome to contact us.
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2020 – today
- 2022
[j23]Ki-Nam Kim, Woon-San Ko, Jun-Ho Byun
, Do-Yeon Lee, Jun-Kyo Jeong, Hi-Deok Lee, Ga-Won Lee:
Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods. Sensors 22(22): 8907 (2022)
2010 – 2019
- 2018
- [c18]Youngsik Kim, Ki-Nam Kim:
Design and Evaluation of a MMO Game Server. CSII (selected papers) 2018: 69-82 - 2016
- [j22]Hongjo Kim, Kinam Kim, Hyoungkwan Kim:
Vision-Based Object-Centric Safety Assessment Using Fuzzy Inference: Monitoring Struck-By Accidents with Moving Objects. J. Comput. Civ. Eng. 30(4) (2016) - [c17]Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim:
17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. ISSCC 2016: 306-307 - 2015
- [j21]Seok-Ho Yoon, Ki-Nam Kim, Jiwon Hong, Sang-Wook Kim, Sunju Park:
A community-based sampling method using DPL for online social networks. Inf. Sci. 306: 53-69 (2015) - [j20]Ki-Tae Park, Sangwan Nam, Dae-Han Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Minsu Kim, Hyun Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dae-Seok Byeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Jeong-Hyuk Choi, Kinam Kim:
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. IEEE J. Solid State Circuits 50(1): 204-213 (2015) - [c16]Kinam Kim:
1.1 Silicon technologies and solutions for the data-driven world. ISSCC 2015: 1-7 - 2014
- [c15]Sang-Wook Kim, Ki-Nam Kim, Seok-Ho Yoon, Sunju Park:
Sampling in online social networks. SAC 2014: 845-849 - 2012
- [c14]Kinam Kim:
Future silicon technology. ESSCIRC 2012: 1-6 - [c13]Seong-Jin Kim, Byongmin Kang, James D. K. Kim, KeeChang Lee, Chang-Yeong Kim, Kinam Kim:
A 1920×1080 3.65μm-pixel 2D/3D image sensor with split and binning pixel structure in 0.11pm standard CMOS. ISSCC 2012: 396-398 - 2011
- [c12]Sang-Wook Kim, Ki-Nam Kim, Christos Faloutsos, Joon Ho Lee:
Spectral analysis of a blogosphere. CIKM 2011: 2145-2148 - [c11]Kinam Kim:
The Forgotten. SIGGRAPH Asia Computer Animation Festival 2011: 13:1 - [i1]Seok-Ho Yoon, Ki-Nam Kim, Sang-Wook Kim, Sunju Park:
A Community-Based Sampling Method Using DPL for Online Social Network. CoRR abs/1109.1063 (2011) - 2010
- [j19]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Joo-Sun Choi, Kinam Kim:
Correction on "A 5-Gb/s/pin Transceiver for DDR Memory Interface With a Crosstalk Suppression Scheme" [Aug 09 2222-2232]. IEEE J. Solid State Circuits 45(2): 497 (2010)
2000 – 2009
- 2009
- [j18]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Joo-Sun Choi, Kinam Kim:
A 5-Gb/s/pin Transceiver for DDR Memory Interface With a Crosstalk Suppression Scheme. IEEE J. Solid State Circuits 44(8): 2222-2232 (2009) - [j17]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 0.13-µm CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN. IEEE J. Solid State Circuits 44(11): 3146-3162 (2009) - [c10]Yongsam Moon, Yong-Ho Cho, Hyun-Bae Lee, Byung-Hoon Jeong, Seok-Hun Hyun, Byungchul Kim, In-Chul Jeong, Seong-Young Seo, Junho Shin, Seok-Woo Choi, Ho-Sung Song, Jung-Hwan Choi, Kyehyun Kyung, Young-Hyun Jun, Kinam Kim:
1.2V 1.6Gb/s 56nm 6F2 4Gb DDR3 SDRAM with hybrid-I/O sense amplifier and segmented sub-array architecture. ISSCC 2009: 128-129 - [c9]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 6Gb/s/pin pseudo-differential signaling using common-mode noise rejection techniques without reference signal for DRAM interfaces. ISSCC 2009: 138-139 - 2008
- [j16]Seung-Jun Bae, Kwang-Il Park, Jeong-Don Ihm, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Yoon-Sik Park, Min-Sang Park, Hong-Kyong Lee, Sam-Young Bang, Gil-Shin Moon, Seokwon Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Sunghoon Kim, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim, Soo-In Cho:
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion. IEEE J. Solid State Circuits 43(1): 121-131 (2008) - [j15]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Yong-Jin Yoon, Kwang-Suk Yu, Gi-Tae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. IEEE J. Solid State Circuits 43(1): 150-162 (2008) - [j14]Ki-Tae Park, Myounggon Kang, Doogon Kim, Soonwook Hwang, Byung Yong Choi, Yeong-Taek Lee, Changhyun Kim, Kinam Kim:
A Zeroing Cell-to-Cell Interference Page Architecture With Temporary LSB Storing and Parallel MSB Program Scheme for MLC NAND Flash Memories. IEEE J. Solid State Circuits 43(4): 919-928 (2008) - [j13]Jung-Sik Kim, Kyung-Woo Nam, Chi Sung Oh, Han Gu Sohn, Donghyuk Lee, Sooyoung Kim, Jong-Wook Park, Yongjun Kim, Mi-Jo Kim, Jin-Guk Kim, Hocheol Lee, Jinhyoung Kwon, Dong Il Seo, Young-Hyun Jun, Kinam Kim:
A 512 Mb Two-Channel Mobile DRAM (OneDRAM) With Shared Memory Array. IEEE J. Solid State Circuits 43(11): 2381-2389 (2008) - [c8]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Kinam Kim:
A 5-Gb/s/pin transceiver for DDR memory interface with a crosstalk suppression scheme. CICC 2008: 639-642 - [c7]Seung-Jun Bae, Young-Soo Sohn, Kwang-Il Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jingook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim, Hye-Ran Kim, Yong-Jae Shin, Cheol-Goo Park, Gil-Shin Moon, Ki-Woong Yeom, Kang-Young Kim, Jae-Young Lee, Hyang-Ja Yang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. ISSCC 2008: 278-279 - [c6]Kyomin Sohn, Young-Ho Suh, Young-Jae Son, Daesik Yim, Kang-Young Kim, Dae-Gi Bae, Ted Kang, Hoon Lim, Soon-Moon Jung, Hyun-Geun Byun, Young-Hyun Jun, Kinam Kim:
A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy. ISSCC 2008: 386-387 - 2007
- [j12]Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, KwangJin Lee, Changsoo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim, YunSueng Shin:
A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. IEEE J. Solid State Circuits 42(1): 210-218 (2007) - [c5]Kinam Kim, Donggun Park:
The future outlook of memory devices. ESSCIRC 2007: 47 - [c4]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Kwang-Suk Yu, Gitae Jeong, Hongsik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. ISSCC 2007: 472-616 - 2006
- [j11]Hyung-Rok Oh, Beak-Hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hye-Jin Kim, Ki-Sung Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim:
Enhanced write performance of a 64-mb phase-change random access memory. IEEE J. Solid State Circuits 41(1): 122-126 (2006) - 2005
- [j10]Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim:
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). IEEE J. Solid State Circuits 40(1): 293-300 (2005) - [j9]Yoon-Jong Song, Heung-Jin Joo, Seung-Kuk Kang, Hyun-Ho Kim, Jung-Hoon Park, Y. M. Kang, E. Y. Kang, Sung-Young Lee, Kinam Kim:
Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. Microelectron. Reliab. 45(7-8): 1150-1153 (2005) - [c3]ByungJun Min, Kang-Woon Lee, Han-Ju Lee, So-Ra Kim, Seung-Gyu Oh, Byung-Gil Jeon, Hee-Hyun Yang, Min-Kyu Kim, Sung-Hee Cho, Honsik Cheong, Chilhee Chung, Kinam Kim:
An embedded nonvolatile FRAM with electrical fuse repair scheme and one time programming scheme for high performance smart cards. CICC 2005: 255-258 - [c2]Kinam Kim, Gitae Jeong, Hongsik Jeong, Sungyung Lee:
Emerging memory technologies. CICC 2005: 423-426 - [c1]Eunju Kim, Jung Sun Choi, Junsang Yoon, Kinam Kim, Youngju Park, Youno Park:
Chohon. SIGGRAPH Electronic Art and Animation Catalog 2005: 264 - 2003
- [j8]Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim:
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38(11): 1906-1910 (2003) - [j7]Kinam Kim, Yoon-Jong Song:
Integration technology for ferroelectric memory devices. Microelectron. Reliab. 43(3): 385-398 (2003) - 2002
- [j6]Mun-Kyu Choi, Byung-Gil Jeon, Nakwon Jang, Byung-Jun Min, Yoon-Jong Song, Sung-Yung Lee, Hyun-Ho Kim, Dong-Jin Jung, Heung-Jin Joo, Kinam Kim:
A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme. IEEE J. Solid State Circuits 37(11): 1472-1478 (2002) - [j5]Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim:
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectron. Reliab. 42(3): 349-354 (2002) - [j4]Kinam Kim, Gitae Jeong, Chan-Woong Chun, Sam-Jin Hwang:
DRAM reliability. Microelectron. Reliab. 42(4-5): 543-553 (2002) - 2000
- [j3]Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim:
A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit. IEEE J. Solid State Circuits 35(11): 1690-1694 (2000)
1990 – 1999
- 1999
- [j2]Hongil Yoon, Gi-Won Cha, Changsik Yoo, Nam-Jong Kim, Keum-Yong Kim, Chang Ho Lee, Kyu-Nam Lim, Kyuchan Lee, Jun-Young Jeon, Tae Sung Jung, Hongsik Jeong, Tae-Young Chung, Kinam Kim, Soo-In Cho:
A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM. IEEE J. Solid State Circuits 34(11): 1589-1599 (1999) - 1996
- [j1]Jei-Hwan Yoo, Chang-Hyun Kim, Kyu-Chan Lee, Kye-Hyun Kyung, Seung-Moon Yoo, Jung-Hwa Lee, Moon-Hae Son, Jin-Man Han, Bok-Moon Kang, Ejaz Haq, Sang-Bo Lee, Jai-Hoon Sim, Joung-Ho Kim, Byung-Sik Moon, Keum-Yong Kim, Jae-Gwan Park, Kyu-Phil Lee, Kang-Yoon Lee, Ki-Nam Kim, Soo-In Cho, Jong-Woo Park, Hyung-Kyu Lim:
A 32-bank 1 Gb self-strobing synchronous DRAM with 1 GByte/s bandwidth. IEEE J. Solid State Circuits 31(11): 1635-1644 (1996)
Coauthor Index
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