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ORCIDYoung-Jun Park 0006
Person information
- affiliation: SK hynix Semiconductor, Icheon, Korea
Other persons with the same name
- Young-Jun Park (aka: Young Jun Park) — disambiguation page
- Young-Jun Park 0001
![[0000-0003-0018-2310]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0003-0018-2310")
— Seoul National University, Department of Biosystems Engineering, Convergence Major in Global Smart Farm, Korea - Young-Jun Park 0002 (aka: Young Jun Park 0002) — Ryerson University, Department of Electrical and Computer Engineering, Toronto, ON, Canada (and 1 more)
- Young-Jun Park 0003 — Kyungpook National University, Intelligent Construction Automation Center, Korea
- Young-Jun Park 0004 — Korea Military Academy, Department of Civil Engineering and Environmental Sciences, Seoul, Korea
- Young-Jun Park 0005 (aka: Young Jun Park 0005) — Sungkyunkwan University, College of Information and Communication Engineering, Suwon, Korea
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2020 – today
- 2024
[c4]Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae-Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae-Sik Yun, Jin Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim:
13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. ISSCC 2024: 238-240- 2023
- [j1]Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho, Ji Hwan Park, Junil Moon, Sung-Hak Lee, Tae-Kyun Kim, Sanghoon Oh, Seokwoo Choi, Yongsuk Choi, Ho Sung Cho, Tae-Sik Yun, Young Jun Koo, Jae-Seung Lee, Byung Kuk Yoon, Young-Jun Park, Sangmuk Oh, Chang Kwon Lee, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Kyo Yun Lee, Sang-Hoon Lee, Woo Sung We, Seungchan Kim, Seung Min Yang, Keonho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Seonyeol Kim, Dong-Yeol Lee, Su-Hyun Oh, Junghyun Shin, Yeonho Lee, Jieun Jang, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. IEEE J. Solid State Circuits 58(1): 256-269 (2023) - 2022
- [c3]Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo, Sang-Sic Yoon, Dong-Uk Lee, Seokwoo Choi, Ji Hwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung Kuk Yoon, Young-Jun Park, Sangmuk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. ISSCC 2022: 444-446 - 2020
- [c2]Dong-Uk Lee, Ho Sung Cho, Jihwan Kim, Young Jun Ku, Sangmuk Oh, Chul Dae Kim, Hyun Woo Kim, Wooyoung Lee, Tae-Kyun Kim, Tae Sik Yun, Min Jeong Kim, SeungGyeon Lim, Seong Hee Lee, Byung Kuk Yun, Jun Il Moon, Ji Hwan Park, Seokwoo Choi, Young Jun Park, Chang Kwon Lee, Chunseok Jeong, Jae-Seung Lee, Sang Hun Lee, Woo Sung We, Jong Chan Yun, Doobock Lee, Junghyun Shin, Seungchan Kim, Junghwan Lee, Jiho Choi, Yucheon Ju, Myeong-Jae Park, Kang Seol Lee, Youngdo Hur, Daeyong Shim, Sangkwon Lee, Junhyun Chun, Kyowon Jin:
22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. ISSCC 2020: 334-336
2010 – 2019
- 2014
- [c1]Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Hongjung Kim, Ju Young Kim, Young Jun Park, Jae Hwan Kim, Dae Suk Kim, Heat Bit Park, Jin Wook Shin, Jang Hwan Cho, Ki Hun Kwon, Min Jeong Kim, Jaejin Lee, Kunwoo Park, Byong-Tae Chung, Sung-Joo Hong:
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV. ISSCC 2014: 432-433
Coauthor Index
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