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ORCIDAntonio Gnudi
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- affiliation: University of Bologna, Italy
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2020 – today
- 2024
[j20]Alessia Maria Elgani
, Matteo D'Addato, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A Temperature-Robust Envelope Detector Receiving OOK-Modulated Signals for Low-Power Applications. Sensors 24(19): 6369 (2024)- 2023
- [c30]Matteo D'Addato, Luca Perilli, Alessia Maria Elgani, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A Threshold Voltage Generator Circuit with Automatic Refresh and Dynamic Updating for Ultra-Low-Power Continuous-Time Comparators. ISCAS 2023: 1-5 - 2022
- [j19]Said Quqa, Alessio Antolini, Eleonora Franchi Scarselli, Antonio Gnudi, Andrea Lico, Marcella Carissimi, Marco Pasotti, Roberto Canegallo, Luca Landi, Pier Paolo Diotallevi:
Phase Change Memories in Smart Sensing Solutions for Structural Health Monitoring. J. Comput. Civ. Eng. 36(4) (2022) - [c29]Alessio Antolini, Andrea Lico, Eleonora Franchi Scarselli, Antonio Gnudi, Luca Perilli, Mattia Luigi Torres, Marcella Carissimi, Marco Pasotti, Roberto Canegallo:
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation. ESSCIRC 2022: 109-112 - [c28]Matteo D'Addato, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A 54.8-nW, 256-bit Codeword Temperature-Robust Wake-Up Receiver minimizing False Wake-Ups for Ultra-Low-Power IoT Systems. ICECS 2022 2022: 1-4 - 2021
- [c27]Carmine Paolino, Alessio Antolini, Fabio Pareschi, Mauro Mangia, Riccardo Rovatti, Eleonora Franchi Scarselli, Antonio Gnudi, Gianluca Setti, Roberto Canegallo, Marcella Carissimi, Marco Pasotti:
Compressed Sensing by Phase Change Memories: Coping with Encoder non-Linearities. ISCAS 2021: 1-5 - 2020
- [j18]Alessia Maria Elgani, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector. IEEE Trans. Circuits Syst. I Regul. Pap. 67-I(8): 2612-2624 (2020) - [c26]Matteo D'Addato, Alessio Antolini, Francesco Renzini, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Michele Magno, Roberto Canegallo:
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers. EWSN 2020: 224-229
2010 – 2019
- 2019
- [c25]Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini:
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC 2019: 86-89 - [c24]Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi:
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC 2019: 266-269 - 2018
- [j17]Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. 88-90: 752-755 (2018) - [j16]Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. 88-90: 1090-1093 (2018) - [j15]Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. 88-90: 1094-1097 (2018) - [c23]Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi:
3D TCAD modeling of NO2CNT FET sensors. ESSDERC 2018: 222-225 - [c22]Alessia Maria Elgani, Michele Magno, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti, Luca Benini:
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures. ICECS 2018: 793-796 - 2016
- [c21]Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani:
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC 2016: 180-183 - [c20]Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro:
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC 2016: 184-187 - [c19]Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani:
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC 2016: 416-419 - 2015
- [c18]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSCIRC 2015: 4-9 - [c17]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSDERC 2015: 4-9 - 2014
- [c16]Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC 2014: 262-265 - [c15]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC 2014: 313-316 - [c14]Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC 2014: 325-328 - [c13]Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336 - 2013
- [j14]Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44(1): 20-25 (2013) - [c12]Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC 2013: 69-72 - [c11]Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76 - [c10]Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC 2013: 81-84 - [c9]Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison:
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC 2013: 91-94 - [c8]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC 2013: 314-317 - 2012
- [c7]Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani:
Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108 - [c6]Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise:
TCAD degradation modeling for LDMOS transistors. ESSDERC 2012: 185-188 - 2011
- [j13]Marco Guermandi, Eleonora Franchi, Antonio Gnudi:
On the simulation of fast settling charge pump PLLs up to fourth order. Int. J. Circuit Theory Appl. 39(12): 1257-1273 (2011) - [j12]Eleonora Franchi Scarselli, Antonio Gnudi, Federico Natali, Mauro Scandiuzzo, Roberto Canegallo, Roberto Guerrieri:
Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling. IEEE J. Solid State Circuits 46(2): 498-506 (2011) - 2010
- [j11]Paola Tortori, Davide Guermandi, Marco Guermandi, Eleonora Franchi, Antonio Gnudi:
Quadrature VCOs based on direct second harmonic locking: Theoretical analysis and experimental validation. Int. J. Circuit Theory Appl. 38(10): 1063-1086 (2010)
2000 – 2009
- 2009
- [c5]Luca Larcher, Riccardo Brama, Marcello Ganzerli, Jacopo Iannacci, Marco Bedani, Antonio Gnudi:
A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard. DATE 2009: 364-368 - [c4]Eleonora Franchi, Federico Natali, Antonio Gnudi, Roberto Guerrieri, Massimiliano Innocenti, Luca Ciccarelli, Mauro Scandiuzzo, Roberto Canegallo:
3D capacitive transmission of analog signals with automatic compensation of the voltage attenuation. ESSCIRC 2009: 116-119 - 2008
- [i3]Jacopo Iannacci, Jason Tian, Roberto Gaddi, Antonio Gnudi, Marian Bartek:
A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package. CoRR abs/0802.3057 (2008) - [i2]Marco Bedani, F. Carozza, Roberto Gaddi, Antonio Gnudi, Benno Margesin, Flavio Giacomozzi:
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches. CoRR abs/0802.3088 (2008) - 2007
- [j10]Stefano Vitali, Eleonora Franchi, Antonio Gnudi:
RFI/Q Downconverter With Gain/Phase Calibration. IEEE Trans. Circuits Syst. II Express Briefs 54-II(4): 367-371 (2007) - [i1]Jacopo Iannacci, Jason Tian, Saoer Sinaga, Roberto Gaddi, Antonio Gnudi, Marian Bartek:
Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems. CoRR abs/0711.3275 (2007) - 2005
- [j9]Davide Guermandi, Paola Tortori, Eleonora Franchi, Antonio Gnudi:
A 0.83-2.5-GHz continuously tunable quadrature VCO. IEEE J. Solid State Circuits 40(12): 2620-2627 (2005) - [c3]Stefano Vitali, Eleonora Franchi, Antonio Gnudi:
A gain/phase mismatch calibration procedure for RF I/Q downconverters. ISCAS (3) 2005: 2108-2111 - 2004
- [c2]Davide Guermandi, Eleonora Franchi, Antonio Gnudi:
A design flow for inductively degenerated LNAs. ICECS 2004: 615-618 - [c1]Paola Tortori, Davide Guermandi, Eleonora Franchi, Antonio Gnudi:
Quadrature VCO based on direct second harmonic locking. ISCAS (1) 2004: 169-172
1990 – 1999
- 1998
- [j8]Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan:
Transient Analysis of Silicon Devices Using the Hydrodynamic Model. VLSI Design 6(1-4): 283-286 (1998) - 1994
- [j7]Alberto Leone, Antonio Gnudi, Giorgio Baccarani:
Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(11): 1400-1408 (1994) - 1993
- [j6]Antonio Gnudi, Davide Ventura, Giorgio Baccarani:
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11): 1706-1713 (1993) - 1992
- [j5]Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh:
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36(2): 208-232 (1992) - 1990
- [j4]Antonio Gnudi, Farouk Odeh, Massimo Rudan:
Investigation of non-local transport phenomena in small semiconductor devices. Eur. Trans. Telecommun. 1(3): 307-312 (1990)
1980 – 1989
- 1989
- [j3]Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(5): 490-500 (1989) - 1988
- [j2]Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 231-242 (1988) - 1987
- [j1]Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani:
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6(5): 879-885 (1987)
Coauthor Index
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