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In-Mo Kim
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2020 – today
- 2021
- [c5]Jiho Cho, D. Chris Kang, Jongyeol Park, Sangwan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, Byunghoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-Yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, Jonghoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae-Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jai Hyuk Song:
A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. ISSCC 2021: 426-428
2010 – 2019
- 2017
- [j2]Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Cheon An Lee, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yup Lee, Ki-Tae Park, Kyehyun Kyung:
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. IEEE J. Solid State Circuits 52(1): 210-217 (2017) - [c4]Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sunghoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC 2017: 202-203 - 2016
- [j1]Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51(1): 204-212 (2016) - [c3]Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. ISSCC 2016: 130-131 - 2015
- [c2]Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. ISSCC 2015: 1-3 - 2011
- [c1]Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Youngho Lim, Tae-Sung Jung:
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. ISSCC 2011: 212-213
Coauthor Index
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