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I. P. Tyagulskyy

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2007
[j1]
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I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, Richard Potter, Paul R. Chalker:
Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures. Microelectron. Reliab. 47(4-5): 726-728 (2007)

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