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"A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction ..."

Moufu Kong et al. (2021)

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DOI: 10.1109/ASICON52560.2021.9620225

access: closed

type: Conference or Workshop Paper

metadata version: 2021-12-06

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  dblp key:
  - conf/asicon/KongHGCGNYY21
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  - https://dblp.org/rec/conf/asicon/KongHGCGNYY21
Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Jiaxin Guo, Sadaf Ali Nafees, Bo Yi, Hongqiang Yang:
A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. ASICON 2021: 1-4

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