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"The enhancement mode AlGaN/GaN high electron mobility transistor based on ..."

Hui Wang et al. (2017)

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DOI: 10.1109/ASICON.2017.8252562

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Hui Wang, Lingli Jiang, Ning Wang, Xinpeng Lin, Hongyu Yu:
The enhancement mode AlGaN/GaN high electron mobility transistor based on charge storage. ASICON 2017: 662-665

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