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"A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low ..."

M. Sultan M. Siddiqui, Zhao Chuan Lee, Tony Tae-Hyoung Kim (2017)

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DOI: 10.1109/ASSCC.2017.8240242

access: closed

type: Conference or Workshop Paper

metadata version: 2018-01-05

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  - conf/asscc/SiddiquiLK17
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M. Sultan M. Siddiqui, Zhao Chuan Lee, Tony Tae-Hyoung Kim:
A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI. A-SSCC 2017: 165-168

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