"Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI ..."

Antony Abel Kunnath et al. (2024)

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DOI: 10.1109/BCICTS59662.2024.10745682

access: closed

type: Conference or Workshop Paper

metadata version: 2024-11-28

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Antony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther:
Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. BCICTS 2024: 80-83

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