"Statistical advantages of intrinsic channel fully depleted SOI MOSFETs ..."

Toshiro Hiramoto et al. (2011)

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DOI: 10.1109/CICC.2011.6055354

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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Toshiro Hiramoto, Anil Kumar, Tomoko Mizutani, Jun Nishimura, Takuya Saraya:
Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs. CICC 2011: 1-4

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