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"A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically ..."
Kunyang Liu, Hongliang Pu, Hirofumi Shinohara (2020)
- Kunyang Liu, Hongliang Pu, Hirofumi Shinohara:
A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in. CICC 2020: 1-4
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