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"Notched gate MOSFET for capacitance reduction in RF SOI technology."

Lucas Antunes Tambara et al. (2023)

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DOI: 10.1109/DTTIS59576.2023.10348288

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-10

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  dblp key:
  - conf/dttis/TambaraMAMDGBDWDGCJBRF23
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  persistent URL:
  - https://dblp.org/rec/conf/dttis/TambaraMAMDGBDWDGCJBRF23
Lucas Antunes Tambara, Pascal Masson, Julien Amouroux, Stéphane Monfray, Julien Dura, Frederic Gianesello, Julien Babic, Romain Debroucke, Loic Welter, Siddhartha Dhar, Bernadette Gros, Clement Charbuillet, Franck Julien, Guillaume Bertrand, Arnaud Régnier, Alain Fleury:
Notched gate MOSFET for capacitance reduction in RF SOI technology. DTTIS 2023: 1-4

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