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"2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s ..."

Marcella Carissimi et al. (2019)

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DOI: 10.1109/ESSCIRC.2019.8902656

access: closed

type: Conference or Workshop Paper

metadata version: 2022-04-09

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  - conf/esscirc/CarissimiMTDMTG19
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Marcella Carissimi, Ritesh Mukherjee, Vivek Tyagi, Fabio Disegni, Davide Manfrè, Cesare Torti, Daniele Gallinari, Sandro Rossi, Andrea Gambero, Donatella Brambilla, Paola Zuliani, Riccardo Zurla, Alessandro Cabrini, Guido Torelli, Marco Pasotti, Chantal Auricchio, Emanuela Calvetti, Laura Capecchi, Luigi Croce, Stefano Zanchi, Vikas Rana, Preeti Mishra:
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications. ESSCIRC 2019: 135-138

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