"E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator."

Mattia Capriotti et al. (2015)

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DOI: 10.1109/ESSDERC.2015.7324713

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl:
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63

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