"Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical ..."

Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk (2015)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2015.7324774

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/Carrillo-NunezL15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/Carrillo-NunezL15
Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk:
Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths. ESSDERC 2015: 302-305

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.