"Transport characterization of CMOS-based devices fabricated with ..."

G. Elbaz et al. (2023)

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DOI: 10.1109/ESSDERC59256.2023.10268523

access: closed

type: Conference or Workshop Paper

metadata version: 2023-10-09

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G. Elbaz, Mikaël Cassé, V. Labracherie, G. Roussely, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, F. Balestro, Matias Urdampilleta, Tristan Meunier, Bruna Cardoso Paz:
Transport characterization of CMOS-based devices fabricated with isotopically-enriched ²⁸Si for spin qubit applications. ESSDERC 2023: 5-8

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