"Interplay between hot carrier and bias stress components in single-layer ..."

Yury Illarionov et al. (2015)

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DOI: 10.1109/ESSDERC.2015.7324741

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-17

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Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser:
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC 2015: 172-175

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