"Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after ..."

S. A. Jauss et al. (2015)

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DOI: 10.1109/ESSDERC.2015.7324712

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

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S. A. Jauss, S. Schwaiger, W. Daves, S. Noll, O. Ambacher:
Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress. ESSDERC 2015: 56-59

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