"Advantage of TiN Schottky gate over conventional Ni for improved ..."

Takamasa Kawanago et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818830

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110

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