"Physical understanding of electron mobility in uniaxially strained ..."

SangHyeon Kim et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818838

access: closed

type: Conference or Workshop Paper

metadata version: 2022-01-03

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SangHyeon Kim, Masafumi Yokoyama, Yuki Ikku, Ryosho Nakane, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi:
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs. ESSDERC 2013: 139-142

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