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"Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications."

Shraddha Kothari et al. (2015)

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DOI: 10.1109/ESSDERC.2015.7324753

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

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  dblp key:
  - conf/essderc/KothariJVNCGL15
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  - https://dblp.org/rec/conf/essderc/KothariJVNCGL15
Shraddha Kothari, Chandan Joishi, Dhirendra Vaidya, Hasan Nejad, Benjamin Colombeau, Swaroop Ganguly, Saurabh Lodha:
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications. ESSDERC 2015: 214-217

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