"Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced ..."

Nicolo Oliva et al. (2018)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2018.8486867

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/OlivaCCI18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/OlivaCCI18
Nicolo Oliva, Emanuele A. Casu, Matteo Cavalleri, Adrian M. Ionescu:
Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control. ESSDERC 2018: 114-117

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.