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"New Insights into Read Current Margin and Memory Window of HfO2-based ..."

Chang Su et al. (2023)

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DOI: 10.1109/ESSDERC59256.2023.10268479

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-03

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Chang Su, Zhongxin Liang, Zhiyuan Fu, Shaodi Xu, Kaifeng Wang, Puyang Cai, Liang Chen, Ru Huang, Qianqian Huang:
New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout. ESSDERC 2023: 89-92

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