"4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as ..."

Fengben Xi et al. (2021)

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DOI: 10.1109/ESSDERC53440.2021.9631818

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Fengben Xi, Yi Han, Andreas T. Tiedemann, Detlev Grützmacher, Qing-Tai Zhao:
4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. ESSDERC 2021: 291-294

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