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"ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in ..."

Sheng-Kai Fan et al. (2019)

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DOI: 10.1109/GCCE46687.2019.9015497

access: closed

type: Conference or Workshop Paper

metadata version: 2020-03-08

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  dblp key:
  - conf/gcce/FanCJWL19
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Sheng-Kai Fan, Shen-Li Chen, Yu-Lin Jhou, Pei-Lin Wu, Po-Lin Lin:
ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices. GCCE 2019: 81-82

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