"Artificial Neural Network based Model for Power GaN HEMTs down to 4.2K."

Zikun Xiang et al. (2024)

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DOI: 10.1109/ICTA64028.2024.10860543

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-17

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Zikun Xiang, Haochen Zhang, Bolun Zeng, Lei Yang, Liling Qiu, Xi Jin, Guoping Guo, Chao Luo, Haiding Sun:
Artificial Neural Network based Model for Power GaN HEMTs down to 4.2K. ICTA 2024: 216-217

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