"Enabling Merged 3D NAND Memory Hole and Interlayer Dielectric (ILD) ..."

John Hoang et al. (2025)

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DOI: 10.1109/IMW61990.2025.11026958

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-25

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John Hoang, George Matamis, Calvin Pham, Hao Chi, Jonathan Church, Pramod Subramonium:
Enabling Merged 3D NAND Memory Hole and Interlayer Dielectric (ILD) Contact Etches with Deposition and Etch Co-Optimization (DECO). IMW 2025: 1-4

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