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"Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap ..."
Sunghyun Yoon et al. (2022)
- Sunghyun Yoon, Sung-In Hong, Garam Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Changhan Kim, Kyunghoon Min:
Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory. IMW 2022: 1-4
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