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"Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by ..."

Jacopo Franco et al. (2018)

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DOI: 10.1109/IRPS.2018.8353601

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-24

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  dblp key:
  - conf/irps/FrancoKCBL18
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Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten:
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS 2018: 5

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