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"Characterization and reliability of III-V gate-all-around MOSFETs."
Mengwei Si et al. (2015)
- Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye:

Characterization and reliability of III-V gate-all-around MOSFETs. IRPS 2015: 4

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