"The relationship between border traps characterized by AC admittance and ..."

Abhitosh Vais et al. (2015)

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DOI: 10.1109/IRPS.2015.7112742

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5

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