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"An improved analytical model of GaN HEMT in cascode configuration during ..."

Ning Zhang et al. (2015)

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DOI: 10.1109/ISIE.2015.7281474

access: closed

type: Conference or Workshop Paper

metadata version: 2022-03-10

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Ning Zhang, Zhao Lin, Liang Hong, Yunyu Tang, Hao Ma:
An improved analytical model of GaN HEMT in cascode configuration during turn-on transition. ISIE 2015: 233-238

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