"An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS ..."

Mahdi Elghazali, Manoj Sachdev, Ajoy Opal (2018)

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DOI: 10.1109/ISQED.2018.8357290

access: closed

type: Conference or Workshop Paper

metadata version: 2018-05-15

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Mahdi Elghazali, Manoj Sachdev, Ajoy Opal:
An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. ISQED 2018: 214-220

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