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"13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with ..."

Yen-Huei Chen et al. (2014)

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DOI: 10.1109/ISSCC.2014.6757416

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-10

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  - conf/isscc/ChenCWLPLCLCLCW14
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Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, George H. Chang, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Sreedhar Natarajan, Jonathan Chang:
13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. ISSCC 2014: 238-239

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