"A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and ..."

Myeong-Jae Park et al. (2022)

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DOI: 10.1109/ISSCC42614.2022.9731562

access: closed

type: Conference or Workshop Paper

metadata version: 2025-05-26

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Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo, Sang-Sic Yoon, Dong-Uk Lee, Seokwoo Choi, Ji Hwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung Kuk Yoon, Young-Jun Park, Sangmuk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. ISSCC 2022: 444-446

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