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- Chang Hua Siau, Kwang-Ho Kim, Seungpil Lee, Katsuaki Isobe, Noboru Shibata, Kapil Verma, Takuya Ariki, Jason Li, Jong Yuh, Anirudh Amarnath, Qui Nguyen, Ohwon Kwon, Stanley Jeong, Heguang Li, Hua-Ling Hsu, Taiyuan Tseng, Steve Choi, Siddhesh Darne, Pradeep Anantula, Alex Yap, Hardwell Chibvongodze, Hitoshi Miwa, Minoru Yamashita, Mitsuyuki Watanabe, Koichiro Hayashi, Yosuke Kato, Toru Miwa, Jang Yong Kang, Masatoshi Okumura, Naoki Ookuma, Muralikrishna Balaga, Venky Ramachandra, Aki Matsuda, Swaroop Kulkarni, Raghavendra Rachineni, Pai K. Manjunath, Masahito Takehara, Anil Pai, Srinivas Rajendra, Toshiki Hisada, Ryo Fukuda, Naoya Tokiwa, Kazuaki Kawaguchi, Masashi Yamaoka, Hiromitsu Komai, Takatoshi Minamoto, Masaki Unno, Susumu Ozawa, Hiroshi Nakamura, Tomoo Hishida, Yasuyuki Kajitani, Lei Lin:
A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology. ISSCC 2019: 218-220
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