"24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an ..."

Taejoong Song et al. (2021)

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DOI: 10.1109/ISSCC42613.2021.9365988

access: closed

type: Conference or Workshop Paper

metadata version: 2021-04-14

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Taejoong Song, Woojin Rim, Hoonki Kim, Keun Hwi Cho, Taeyeong Kim, Taejung Lee, Geumjong Bae, Dong-Won Kim, S. D. Kwon, Sanghoon Baek, Jonghoon Jung, Jongwook Kye, Hakchul Jung, Hyungtae Kim, Soon-Moon Jung, Jaehong Park:
24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit. ISSCC 2021: 338-340

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