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"Device performance tuning of Ge gate-all-around tunneling field effect ..."

Erlend G. Rolseth et al. (2017)

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DOI: 10.23919/MIPRO.2017.7973391

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  - conf/mipro/RolsethBFHKKKSW17
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  - https://dblp.org/rec/conf/mipro/RolsethBFHKKKSW17
Erlend G. Rolseth, Andreas Blech, Inga A. Fischer, Youssef Hashad, Roman Koerner, Konrad Kostecki, Aleksei Kruglov, V. S. Senthil Srinivasan, Mathias Weiser, Torsten Wendav, Kurt Busch, Jörg Schulze:
Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges. MIPRO 2017: 57-65

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