"Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs."

Chaymaa Haloui et al. (2020)

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DOI: —

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type: Conference or Workshop Paper

metadata version: 2020-08-13

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Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle:
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. MIXDES 2020: 181-184

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