"A correction code for multiple cells upsets in memory devices for space ..."

Helano de S. Castro et al. (2016)

> Home

Details and statistics

DOI: 10.1109/NEWCAS.2016.7604783

access: closed

type: Conference or Workshop Paper

metadata version: 2022-04-09

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/newcas/CastroSCSML16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/newcas/CastroSCSML16
Helano de S. Castro, Jarbas A. N. da Silveira, Alexandre A. P. Coelho, Felipe G. A. e Silva, Philippe de S. Magalhães, Otávio A. de Lima:
A correction code for multiple cells upsets in memory devices for space applications. NEWCAS 2016: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.