"Bi-Linearity of Back Gated Schottky Barrier Transistors on an Industrial ..."

Juan P. Martinez et al. (2025)

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DOI: 10.1109/NEWCAS64648.2025.11107039

access: closed

type: Conference or Workshop Paper

metadata version: 2025-08-30

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Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Ian O'Connor, Thomas Mikolajick, Jens Trommer:
Bi-Linearity of Back Gated Schottky Barrier Transistors on an Industrial 22nm FDSOI Platform for Efficient In-Hardware Matrix-Vector Multiplication and Addition. NewCAS 2025: 470-474

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