"A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate ..."

Shaun Chou et al. (2021)

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DOI: 10.23919/VLSICIRCUITS52068.2021.9492438

access: closed

type: Conference or Workshop Paper

metadata version: 2021-08-02

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Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang:
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. VLSI Circuits 2021: 1-2

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