"A 7nm Fin-FET 4.04-Mb/mm2 TCAM with Improved Electromigration Reliability ..."

Makoto Yabuuchi et al. (2020)

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DOI: 10.1109/VLSICIRCUITS18222.2020.9162775

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-24

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Makoto Yabuuchi, Masao Morimoto, Yasumasa Tsukamoto, Shinji Tanaka:
A 7nm Fin-FET 4.04-Mb/mm2 TCAM with Improved Electromigration Reliability Using Far-Side Driving Scheme and Self-Adjust Reference Match-Line Amplifier. VLSI Circuits 2020: 1-2

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