"A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture ..."

Jonathan Chang et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185287

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Jonathan Chang, Yen-Huei Chen, Gary Chan, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Sevic Chen, Peijiun Lin, Ching-Wei Wu, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Atul Katoch, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li:
A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications. VLSI Technology and Circuits 2023: 1-2

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