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"3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off ..."

J.-Y. Lee et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185163

access: closed

type: Conference or Workshop Paper

metadata version: 2024-01-03

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J.-Y. Lee, F.-S. Chang, Kuo-Yu Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, C. W. Liu, Min-Hung Lee:
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. VLSI Technology and Circuits 2023: 1-2

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