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"Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized ..."
Bernhard Sell et al. (2022)
- Bernhard Sell, S. An, J. Armstrong, D. Bahr, B. Bains, Rohan Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, Tyler Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, Walid M. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, Chetan Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, Justin Sandford, A. Sathe, Faisal Ahmed Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young:

Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing. VLSI Technology and Circuits 2022: 282-283

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