"Record High Active Boron Doping using Low Temperature In-situ CVD: ..."

Gerui Zheng et al. (2023)

> Home

Details and statistics

DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185320

access: closed

type: Conference or Workshop Paper

metadata version: 2025-08-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsit/ZhengWXKMLCSZLG23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsit/ZhengWXKMLCSZLG23
Gerui Zheng, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong:
Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10 Ω-cm² ρc from Cryogenic (5 K) to Room Temperature. VLSI Technology and Circuits 2023: 1-2

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.