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"Roles of the gate length and width of the transistors in increasing the ..."

Zhongshan Zheng et al. (2017)

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DOI: 10.1109/ASICON.2017.8252451

access: closed

type: Conference or Workshop Paper

metadata version: 2018-01-17

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  dblp key:
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Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han:
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells. ASICON 2017: 219-221

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