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"Gating techniques for 6T SRAM cell using different modes of FinFET."

Deeksha Anandani, Anurag Kumar, V. S. Kanchana Bhaaskaran (2015)

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DOI: 10.1109/ICACCI.2015.7275655

access: closed

type: Conference or Workshop Paper

metadata version: 2018-11-02

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Deeksha Anandani, Anurag Kumar, V. S. Kanchana Bhaaskaran:
Gating techniques for 6T SRAM cell using different modes of FinFET. ICACCI 2015: 483-487

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